Nitrogen doping in purely bonded forms of carbon

G. Jungnickel; P. Sitch; Th Frauenheim; B. Eggen; M. Heggie

doi:10.1103/PhysRevB.57.R661

Nitrogen doping in purely bonded forms of carbon

G. Jungnickel
, P. Sitch
, Th Frauenheim
, B. Eggen
, M. Heggie

Research output: Contribution to journal › Article › peer-review

30 Citations (Scopus)

Abstract

We postulate wide-band-gap forms of carbon that locally have a planar bonding configuration as in graphite and, in contrast to diamond, are promising candidates for (Formula presented)-type doping by nitrogen. The presence of localized (Formula presented) bonds makes them as stable as fullerene (Formula presented) and causes large band gaps of (Formula presented) eV to appear. The allotropes accept both nitrogen and boron as substitutional dopants, making them potentially extremely useful for high-power, high-temperature, and high-speed device applications.

Original language	English
Pages (from-to)	R661-R665
Journal	Physical Review B - Condensed Matter and Materials Physics
Volume	57
Issue number	2
DOIs	https://doi.org/10.1103/PhysRevB.57.R661
Publication status	Published - 1998
Externally published	Yes

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10.1103/PhysRevB.57.R661

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@article{108aad1ffe9f4bb9a1a2ed29a706bda6,

title = "Nitrogen doping in purely bonded forms of carbon",

abstract = "We postulate wide-band-gap forms of carbon that locally have a planar bonding configuration as in graphite and, in contrast to diamond, are promising candidates for (Formula presented)-type doping by nitrogen. The presence of localized (Formula presented) bonds makes them as stable as fullerene (Formula presented) and causes large band gaps of (Formula presented) eV to appear. The allotropes accept both nitrogen and boron as substitutional dopants, making them potentially extremely useful for high-power, high-temperature, and high-speed device applications.",

author = "G. Jungnickel and P. Sitch and Th Frauenheim and B. Eggen and M. Heggie",

year = "1998",

doi = "10.1103/PhysRevB.57.R661",

language = "English",

volume = "57",

pages = "R661--R665",

journal = "Physical Review B - Condensed Matter and Materials Physics",

issn = "1098-0121",

publisher = "American Physical Society",

number = "2",

}

TY - JOUR

T1 - Nitrogen doping in purely bonded forms of carbon

AU - Jungnickel, G.

AU - Sitch, P.

AU - Frauenheim, Th

AU - Eggen, B.

AU - Heggie, M.

PY - 1998

Y1 - 1998

N2 - We postulate wide-band-gap forms of carbon that locally have a planar bonding configuration as in graphite and, in contrast to diamond, are promising candidates for (Formula presented)-type doping by nitrogen. The presence of localized (Formula presented) bonds makes them as stable as fullerene (Formula presented) and causes large band gaps of (Formula presented) eV to appear. The allotropes accept both nitrogen and boron as substitutional dopants, making them potentially extremely useful for high-power, high-temperature, and high-speed device applications.

AB - We postulate wide-band-gap forms of carbon that locally have a planar bonding configuration as in graphite and, in contrast to diamond, are promising candidates for (Formula presented)-type doping by nitrogen. The presence of localized (Formula presented) bonds makes them as stable as fullerene (Formula presented) and causes large band gaps of (Formula presented) eV to appear. The allotropes accept both nitrogen and boron as substitutional dopants, making them potentially extremely useful for high-power, high-temperature, and high-speed device applications.

UR - https://www.scopus.com/pages/publications/0000987738

U2 - 10.1103/PhysRevB.57.R661

DO - 10.1103/PhysRevB.57.R661

M3 - Article

AN - SCOPUS:0000987738

SN - 1098-0121

VL - 57

SP - R661-R665

JO - Physical Review B - Condensed Matter and Materials Physics

JF - Physical Review B - Condensed Matter and Materials Physics

IS - 2

ER -

Nitrogen doping in purely bonded forms of carbon

Abstract

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