Nitrogen doping in purely bonded forms of carbon

G. Jungnickel, P. Sitch, Th Frauenheim, B. Eggen, M. Heggie

Research output: Contribution to journalArticlepeer-review

28 Citations (Scopus)

Abstract

We postulate wide-band-gap forms of carbon that locally have a planar bonding configuration as in graphite and, in contrast to diamond, are promising candidates for (Formula presented)-type doping by nitrogen. The presence of localized (Formula presented) bonds makes them as stable as fullerene (Formula presented) and causes large band gaps of (Formula presented) eV to appear. The allotropes accept both nitrogen and boron as substitutional dopants, making them potentially extremely useful for high-power, high-temperature, and high-speed device applications.

Original languageEnglish
Pages (from-to)R661-R665
JournalPhysical Review B - Condensed Matter and Materials Physics
Volume57
Issue number2
DOIs
Publication statusPublished - 1998
Externally publishedYes

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