TY - JOUR
T1 - Nitrogen doping in purely bonded forms of carbon
AU - Jungnickel, G.
AU - Sitch, P.
AU - Frauenheim, Th
AU - Eggen, B.
AU - Heggie, M.
PY - 1998
Y1 - 1998
N2 - We postulate wide-band-gap forms of carbon that locally have a planar bonding configuration as in graphite and, in contrast to diamond, are promising candidates for (Formula presented)-type doping by nitrogen. The presence of localized (Formula presented) bonds makes them as stable as fullerene (Formula presented) and causes large band gaps of (Formula presented) eV to appear. The allotropes accept both nitrogen and boron as substitutional dopants, making them potentially extremely useful for high-power, high-temperature, and high-speed device applications.
AB - We postulate wide-band-gap forms of carbon that locally have a planar bonding configuration as in graphite and, in contrast to diamond, are promising candidates for (Formula presented)-type doping by nitrogen. The presence of localized (Formula presented) bonds makes them as stable as fullerene (Formula presented) and causes large band gaps of (Formula presented) eV to appear. The allotropes accept both nitrogen and boron as substitutional dopants, making them potentially extremely useful for high-power, high-temperature, and high-speed device applications.
UR - http://www.scopus.com/inward/record.url?scp=0000987738&partnerID=8YFLogxK
U2 - 10.1103/PhysRevB.57.R661
DO - 10.1103/PhysRevB.57.R661
M3 - Article
AN - SCOPUS:0000987738
SN - 1098-0121
VL - 57
SP - R661-R665
JO - Physical Review B - Condensed Matter and Materials Physics
JF - Physical Review B - Condensed Matter and Materials Physics
IS - 2
ER -